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Oxide Ceramic Large‐scale Integration Device for Putting the Brakes on Global Boiling Accelerated by Artificial Intelligence Age Computers
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Oxide Ceramic Large‐scale Integration Device for Putting the Brakes on Global Boiling Accelerated by Artificial Intelligence Age Computers
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Oxide Ceramic Large‐scale Integration Device for Putting the Brakes on Global Boiling Accelerated by Artificial Intelligence Age Computers
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Journal Article
Oxide Ceramic Large‐scale Integration Device for Putting the Brakes on Global Boiling Accelerated by Artificial Intelligence Age Computers
2025
Overview
One factor that is considered to be a cause of global boiling, which is becoming a serious social problem, is the rapid progress and widespread use of artificial intelligence (AI). We focus on an oxide ceramic with an extremely low off‐state current (Ioff) of 1 zA/µm to 1 yA/µm and a very large on/off ratio of 17 digits, and we aim to achieve AI with an ultra‐low power consumption using the large‐scale integration of oxide semiconductors (OSs). Field effect transistors (FETs) that include crystal indium oxide (IO) as a channel material exhibit an off‐state current (Ioff) equivalent to that of the FETs that contain indium gallium zinc oxide (IGZO) and an on‐state current (Ion) that is higher than that of the FETs that contain IGZO. Single crystal IO is shown to be a promising material for improving performance and reducing the variation in the characteristics of OS devices. This report introduces the latest trends in the use of oxide ceramics. We expect that the development of these technologies will achieve AI with ultra‐low power consumption in the future, which will be an important remediation against global boiling. The use of oxide ceramic can provide FETs with an extremely low off‐state current of 1 zA/µm to 1 yA/µm and a very large on/off ratio of 17 digits. This report introduces the latest trends in FETs, LSI, and displays using oxide ceramic.
