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Layer-dependent spin-orbit torque switching of Néel vector in a van der Waals antiferromagnet
Layer-dependent spin-orbit torque switching of Néel vector in a van der Waals antiferromagnet
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Layer-dependent spin-orbit torque switching of Néel vector in a van der Waals antiferromagnet
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Layer-dependent spin-orbit torque switching of Néel vector in a van der Waals antiferromagnet
Layer-dependent spin-orbit torque switching of Néel vector in a van der Waals antiferromagnet

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Layer-dependent spin-orbit torque switching of Néel vector in a van der Waals antiferromagnet
Layer-dependent spin-orbit torque switching of Néel vector in a van der Waals antiferromagnet
Journal Article

Layer-dependent spin-orbit torque switching of Néel vector in a van der Waals antiferromagnet

2025
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Overview
Two-dimensional antiferromagnets that combine the dual advantages of van der Waals (vdW) and antiferromagnetic materials, provide an unprecedented platform to explore emergent spin-related phenomena. However, electrical manipulation of Néel vectors in vdW antiferromagnets —the cornerstone of antiferromagnetic spintronics— remains challenging. Here, we report layer-dependent electrical switching of the Néel vector in an A-type vdW antiferromagnet (Fe, Co) 3 GaTe 2 (FCGT) with perpendicular magnetic anisotropy. The Néel vector of FCGT with odd-number vdW layers can be 180° reversed via spin-orbit torques. Furthermore, we achieve field-free switching in an all-vdW, all-antiferromagnet heterostructure of FCGT/CrSBr in which the noncollinear interfacial spin texture breaks the mirror symmetry. Our results establish layer-controlled spin symmetries and interfacial spin engineering as universal paradigms for manipulating antiferromagnetic order, paving the way for realising reliable and efficient vdW antiferromagnetic devices. Antiferromagnets have negligible stray magnetic fields and are robust against magnetic perturbations, making them ideal for high-density magnetic memory. However, these features make electrically switching the Néel vector challenging. Here, Guo, Lin and coauthors demonstrate layer-dependent electrical switching of a van der Waals antiferromagnet.