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Mechanisms for Enhancing Luminescence Yield in KBr Crystals under the Influence of Low-Temperature Uniaxial Elastic Deformation
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Mechanisms for Enhancing Luminescence Yield in KBr Crystals under the Influence of Low-Temperature Uniaxial Elastic Deformation
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Mechanisms for Enhancing Luminescence Yield in KBr Crystals under the Influence of Low-Temperature Uniaxial Elastic Deformation
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Journal Article
Mechanisms for Enhancing Luminescence Yield in KBr Crystals under the Influence of Low-Temperature Uniaxial Elastic Deformation
2024
Overview
This study investigates the radiative relaxation of electronic excitations through luminescence spectroscopy techniques applied to high-purity KBr crystals subjected to low-temperature (85 K) uniaxial deformation along the and crystallographic directions. Results demonstrate that the most significant enhancement in the intensity of σ-(4.42 eV) and π-(2.3 eV) luminescence from self-trapped excitons in KBr crystals occurs with elastic deformation along the direction, aligning with the axis of the hole component of the anion self-trapped exciton. Deformation-induced changes in X-ray, tunneling, and thermally stimulated luminescence spectra reveal a new band, denoted as Ex, peaking at approximately 3.58 eV, attributed to tunneling charge exchange between the F’- and VK-centers in their ground state.
