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Near-critical Stranski-Krastanov growth of InAs/InP quantum dots
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Near-critical Stranski-Krastanov growth of InAs/InP quantum dots
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Journal Article
Near-critical Stranski-Krastanov growth of InAs/InP quantum dots
2024
Overview
This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanov growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between
10
7
and
10
10
cm
-
2
. Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles with well-isolated QD-originated emission lines in the telecom C-band.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
