Journal Article

Device to Circuit Co‐Design Utilizing High‐Performance PEALD Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems

Lan, Jun, Wang, Wenhui, Peng, Haoran, Zhang, Panpan, Feng, Xuewei, Li, Yida, Lin, Longyang, Zhou, Feichi, Yuan, Zelin, Wu, Yongle, Zhang, Tao, Li, Zhixiong

2026

Overview

The development of oxide semiconductor devices for monolithic 3D (M3D) integration has largely remained at the device level, limiting progress toward large‐scale applications. To advance this technology, evaluation from device to circuit level—akin to CMOS—is essential. This work presents a comprehensive study of M3D‐compatible technology using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) fabricated via plasma‐enhanced atomic layer deposition (PEALD). The investigation spans material characterization, device performance, technology computer‐aided design (TCAD) Modeling, circuit design, and scaling projections. At device level, comprehensive material and electrical characterizations elucidate intrinsic property interdependencies in IGZO TFTs, which exhibit a field‐effect mobility (µFE) up to 116.35 cm2 V−1·s−1, high reliability (△VTH < 0.15 V), and low variation (△µFE < 2%). These results enable accurate TCAD models for system‐level co‐design of unipolar TFT circuits, including pseudo‐CMOS inverters, 5‐stage ring oscillators (ROs), and static random‐access memory (SRAM) cells, all exhibiting robust functionality. For future technology scaling, projections to the 22 nm node show RO frequencies up to 240 MHz and SRAM switching times as low as 0.78 ns, with strong dynamic and noise characteristics. This work offers critical insight into circuit‐level performance of PEALD IGZO TFTs and provides valuable guidance for the implementation of oxide semiconductor‐based M3D systems. This article presents a holistic investigation of M3D‐compatible oxide semiconductor technology using PEALD‐fabricated IGZO TFTs, spanning device‐level characterization, TCAD Modeling, circuit design, and scaled‐node projections. It demonstrates high field‐effect mobility (up to 116.35 cm2 V−1·s−1), robust reliability (△VTH < 0.15 V), low variation (△µFE < 2%), and forecasts 240 MHz ring oscillators and 0.78 ns SRAM at 22 nm.

• Publisher: John Wiley & Sons, Inc,Wiley
• Subject: Chemical vapor deposition / Circuits / CMOS / device to circuit co‐design / Indium / indium‐gallium‐zinc oxide / oxide circuit / Semiconductors / Spectrum analysis / technology computer‐aided design Modeling / technology node scaling / thin‐film transistor / Transistors / Zinc oxides