Asset Details
Do you wish to reserve the book?
Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
Do you wish to request the book?
Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
2016
Overview
Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm
0.1
Bi
0.9
FeO
3
layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO
3
single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 10
5
. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.
Tunnelling electroresistance is the variation of resistance of a thin-film junction with the polarization state of its ferroelectric tunnel barrier. Here the authors demonstrate a large light-modulated tunnelling electroresistance and a hysteretic photovoltaic effect in a complex oxide heterostructure.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
