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Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor
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Journal Article
Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor
2016
Overview
Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modify the surface of single-layered graphene and to apply for standard wafer-scale fabrication. Here we show a monolayer chemical-vapour-deposited graphene hydrogenated by indirect hydrogen plasma without structural defect and we demonstrate that a band gap can be tuned as wide as 3.9 eV by varying hydrogen coverage. We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.
The absence of a band gap in graphene hinders its use in electronics. Here, the authors open a band gap as large as 3.9 electronvolts in graphene grown by chemical vapour deposition by treating it in hydrogen plasma, and then use this material to create a room temperature field- effect transistor.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
