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Magnetic-field-induced robust zero Hall plateau state in MnBi2Te4 Chern insulator
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Magnetic-field-induced robust zero Hall plateau state in MnBi2Te4 Chern insulator
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Journal Article
Magnetic-field-induced robust zero Hall plateau state in MnBi2Te4 Chern insulator
2021
Overview
The intrinsic antiferromagnetic topological insulator MnBi
2
Te
4
provides an ideal platform for exploring exotic topological quantum phenomena. Recently, the Chern insulator and axion insulator phases have been realized in few-layer MnBi
2
Te
4
devices at low magnetic field regime. However, the fate of MnBi
2
Te
4
in high magnetic field has never been explored in experiment. In this work, we report transport studies of exfoliated MnBi
2
Te
4
flakes in pulsed magnetic fields up to 61.5 T. In the high-field limit, the Chern insulator phase with Chern number
C
= −1 evolves into a robust zero Hall resistance plateau state. Nonlocal transport measurements and theoretical calculations demonstrate that the charge transport in the zero Hall plateau state is conducted by two counter-propagating edge states that arise from the combined effects of Landau levels and large Zeeman effect in strong magnetic fields. Our result demonstrates the intricate interplay among intrinsic magnetic order, external magnetic field, and nontrivial band topology in MnBi
2
Te
4
.
The antiferromagnetic topological insulator MnBi
2
Te
4
exhibits Chern and axion insulator phases at low magnetic field; however, its behaviour in high magnetic field has remained unexplored. Here, using transport measurements at high magnetic field, the authors report a zero Hall plateau composed of two counter-propagating edge channels.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
