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Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2
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Journal Article
Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2
2024
Overview
Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe
2
. The lattice-matched MoSe
2
nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe
2
with the formation of MoSe
2
-CrSe
2
heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe
2
monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe
2
exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.
Phase engineering of 2D transition metal dichalcogenides enables the investigation of emerging physical properties. Here, the authors report a phase selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe
2
thin films from MoSe
2
nanoribbons, showing Tomonaga-Luttinger liquid behaviour in the CrSe
2
mirror twin boundaries.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
