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Single-spin qubits in isotopically enriched silicon at low magnetic field
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Journal Article
Single-spin qubits in isotopically enriched silicon at low magnetic field
2019
Overview
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control, which limits the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet readout enables high-fidelity spin-state measurements in much lower magnetic fields, without the need for reservoirs. Here, we demonstrate low-field operation of metal-oxide-silicon quantum dot qubits by combining coherent single-spin control with high-fidelity, single-shot, Pauli-spin-blockade-based ST readout. We discover that the qubits decohere faster at low magnetic fields with
T
2
Rabi
=
18.6
μs and
T
2
*
=
1.4
μs at 150 mT. Their coherence is limited by spin flips of residual
29
Si nuclei in the isotopically enriched
28
Si host material, which occur more frequently at lower fields. Our finding indicates that new trade-offs will be required to ensure the frequency stabilization of spin qubits, and highlights the importance of isotopic enrichment of device substrates for the realization of a scalable silicon-based quantum processor.
One of the main sources of decoherence in silicon electron spin qubits is their interaction with nearby fluctuating nuclear spins. Zhao et al. present a device made from enriched silicon to reduce the nuclear spin density and find its performance is still limited by fluctuations of residual spins.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
