Journal Article

Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction

Sakamoto, Shoya, Ando, Ryoya, Miwa, Shinji, Tanaka, Katsuhiro, Kosaki, Hidetoshi, Nishio-Hamane, Daisuke, Nomoto, Takuya, Shiga, Masanobu, Nakatsuji, Satoru, Chen, Xianzhe, Arita, Ryotaro, Idzuchi, Hiroshi, Matsuo, Takumi, Higo, Tomoya, Tsai, Hanshen

2023

Overview

The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly dependent on the relative orientation of magnetizations in ferromagnetic electrodes sandwiching an insulating barrier, rendering efficient readout of spintronics devices 1 – 5 . Thus, tunnelling magnetoresistance (TMR) is considered to be proportional to spin polarization at the interface 1 and, to date, has been studied primarily in ferromagnets. Here we report observation of TMR in an all-antiferromagnetic tunnel junction consisting of Mn 3 Sn/MgO/Mn 3 Sn (ref. 6 ). We measured a TMR ratio of around 2% at room temperature, which arises between the parallel and antiparallel configurations of the cluster magnetic octupoles in the chiral antiferromagnetic state. Moreover, we carried out measurements using a Fe/MgO/Mn 3 Sn MTJ and show that the sign and direction of anisotropic longitudinal spin-polarized current in the antiferromagnet 7 can be controlled by octupole direction. Strikingly, the TMR ratio (about 2%) of the all-antiferromagnetic MTJ is much larger than that estimated using the observed spin polarization. Theoretically, we found that the chiral antiferromagnetic MTJ may produce a substantially large TMR ratio as a result of the time-reversal, symmetry-breaking polarization characteristic of cluster magnetic octupoles. Our work lays the foundation for the development of ultrafast and efficient spintronic devices using antiferromagnets 8 – 10 . The authors report observation of tunnelling magnetoresistance in an all-antiferromagnetic tunnel junction consisting of Mn 3 Sn/MgO/Mn 3 Sn, laying the foundation for the development of ultrafast and efficient spintronic devices using antiferromagnets.

• Publisher: Nature Publishing Group UK,Nature Publishing Group
• Subject: 142/126 / 639/301/1005/1008 / 639/301/119/1001 / 639/301/119/997 / 639/766/119/2792/4128 / Antiferromagnetism / Broken symmetry / Clusters / Electric currents / Electrodes / Ferromagnetism / Humanities and Social Sciences / Magnesium oxide / Magnetic fields / Magnetoresistance / Magnetoresistivity / multidisciplinary / Polarization / Polarization (spin alignment) / Polarization characteristics / Random access memory / Room temperature / Science / Science (multidisciplinary) / Spintronics / Temperature / Tunnel junctions