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Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism
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Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism
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Journal Article
Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism
2019
Overview
In this work, hafnium oxide (HfO
2
) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO
2
films and HfO
2
/Si interfaces is investigated. The crystallization of the HfO
2
films and HfO
2
/Si interface is studied by field emission transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The experimental results show that during annealing, the oxygen diffuse from HfO
2
to Si interface. For annealing temperature below 400 °C, the HfO
2
film and interfacial layer are amorphous, and the latter consists of HfO
2
and silicon dioxide (SiO
2
). At annealing temperature of 450-550 °C, the HfO
2
film become multiphase polycrystalline, and a crystalline SiO
2
is found at the interface. Finally, at annealing temperature beyond 550 °C, the HfO
2
film is dominated by single-phase polycrystalline, and the interfacial layer is completely transformed to crystalline SiO
2
.
Publisher
Springer US,Springer Nature B.V,SpringerOpen
