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High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics
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High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics
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Journal Article
High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics
2024
Overview
With the development of wearable devices and hafnium-based ferroelectrics (FE), there is an increasing demand for high-performance flexible ferroelectric memories. However, developing ferroelectric memories that simultaneously exhibit good flexibility and significant performance has proven challenging. Here, we developed a high-performance flexible field-effect transistor (FeFET) device with a thermal budget of less than 400 °C by integrating Zr-doped HfO
2
(HZO) and ultra-thin indium tin oxide (ITO). The proposed FeFET has a large memory window (MW) of 2.78 V, a high current on/off ratio (I
ON
/I
OFF
) of over 10
8
, and high endurance up to 2×10
7
cycles. In addition, the FeFETs under different bending conditions exhibit excellent neuromorphic properties. The device exhibits excellent bending reliability over 5×10
5
pulse cycles at a bending radius of 5 mm. The efficient integration of hafnium-based ferroelectric materials with promising ultrathin channel materials (ITO) offers unique opportunities to enable high-performance back-end-of-line (BEOL) compatible wearable FeFETs for edge intelligence applications.
Using Zr-doped HfO2 and ultra-thin indium tin oxide, Li et al. develop flexible field-effect transistors with a memory window of 2.78 V and bending reliability to enable high-performance back-end-of-line compatible wearable devices.
