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Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions
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Journal Article
Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions
2025
Overview
In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic control. We utilized a two-step numerical simulation approach grounded in the Schrödinger-Poisson equations to evaluate the performance of our proposed device and accurately calculate the ON-state current. Additionally, we assessed the influence of defects at the heterojunction on the performance of our device. Under quantum mechanical assumptions, parameters such as
I
ON
= 23.8 µA/µm,
SS
AVG
= 12.03 mV/dec, and the
I
ON
/
I
OFF
ratio = 4.88 × 10
10
indicate that our structure is a promising candidate for high-performance applications.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
