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In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs
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In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs
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Journal Article
In situ n-doped nanocrystalline electron-injection-layer for general-lighting quantum-dot LEDs
2025
Overview
Quantum-dot optoelectronics, pivotal for lighting, lasing and photovoltaics, rely on nanocrystalline oxide electron-injection layer. Here, we discover that the prevalent surface magnesium-modified zinc oxide electron-injection layer possesses poor n-type attributes, leading to the suboptimal and encapsulation-resin-sensitive performance of quantum-dot light-emitting diodes. A heavily n-doped nanocrystalline electron-injection layer—exhibiting ohmic transport with 1000 times higher electron conductivity and improved hole blockage—is developed via a simple reductive treatment. The resulting sub-bandgap-driven quantum-dot light-emitting diodes exhibit optimal efficiency and extraordinarily-high brightness, surpassing current benchmarks by at least 2.6-fold, and reaching levels suitable for quantum-dot laser diodes with only modest bias. This breakthrough further empowers white-lighting quantum-dot light-emitting diodes to exceed the 2035 U.S. Department of Energy’s targets for general lighting, which currently accounts for ~15% of global electricity consumption. Our work opens a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices.
Zheng et al. report water vapor treatment for in-situ n-doping of ZnMgO, enabling ideal ohmic electron transport and hole blockage as the electron injection layer for quantum dot light-emitting diodes, and improving the brightness and power efficiency of R/G/B LEDs for general lighting.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
