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Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies
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Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies
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Journal Article
Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies
2020
Overview
The defects into the hexagonal network of a sp2-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.
Publisher
Springer Nature B.V
