Journal Article

Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures

Subbulakshmi Radhakrishnan, Shiva, Mkhoyan, K. Andre, Gopalan, Venkatraman, Sen, Dipanjan, Shah, Jay, Jalan, Bharat, Varshney, Shivasheesh, Yang, Yang, Hazra, Sankalpa, Venkatram, Pranavram, Chen, Chen, Ravichandran, Harikrishnan, Choo, Sooho, Redwing, Joan M., Zhang, Zhiyu, Das, Saptarshi, Das, Mayukh, Sun, Yongwen, Saha, Akash

2024

Overview

Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly, we report incipient ferroelectricity in freestanding SrTiO 3 nanomembranes integrated with monolayer MoS 2 to create multifunctional devices, demonstrating stable ferroelectric order at low temperatures for cryogenic memory devices. Our observation includes ultra-fast polarization switching (~10 ns), low switching voltage (<6 V), over 10 years of nonvolatile retention, 100,000 endurance cycles, and 32 conductance states (5-bit memory) in SrTiO 3 -gated MoS 2 transistors at 15 K and up to 100 K. Additionally, we exploit room-temperature weak polarization switching, a feature of incipient ferroelectricity, to construct a physical reservoir for pattern recognition. Our results showcase the potential of utilizing perovskite material properties enabled by advancements in freestanding film growth and heterogeneous integration, for diverse functional applications. Notably, the low 180 °C thermal budget for fabricating the 3D-SrTiO 3 /2D-MoS 2 device stack enables the integration of diverse materials into silicon complementary metal-oxide-semiconductor technology, addressing challenges in compute-in-memory and neuromorphic applications. Sen et al. report the stacking of a perovskite incipient ferroelectric nanomembrane with atomically thin 2D material for a back-end-of-line compatible ferroelectric-like field effect transistors, functioning as a cryogenic memory at 15 K and as an inference engine at room temperature.

• Publisher: Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
• Subject: 147/135 / 147/143 / 147/3 / 639/301/1005/1007 / 639/301/357/1018 / Ambient temperature / CMOS / Cryogenic temperature / electronic devices / Ferroelectric materials / Ferroelectricity / Field effect transistors / Film growth / Humanities and Social Sciences / Low temperature / Material properties / Memory devices / Molybdenum disulfide / multidisciplinary / Pattern recognition / Perovskites / Polarization / Room temperature / Science / Science (multidisciplinary) / Semiconductor devices / Strontium titanates / Transistors / Two dimensional materials