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Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures
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Journal Article
Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures
2023
Overview
We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe
3-
x
GeTe
2
and the ferroelectric In
2
Se
3
. It is observed that gate voltages applied to the Fe
3-
x
GeTe
2
/In
2
Se
3
heterostructure device modulate the magnetic properties of Fe
3-
x
GeTe
2
with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In
2
Se
3
and Fe
3-
x
GeTe
2
lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe
3-
x
GeTe
2
coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.
The control of magnetism by electric field is an important goal for future development of low-power spintronics. Here, the authors demonstrate voltage control of magnetism in van der Waals ferromagnetic/ferroelectric heterostructure devices via the strain-mediated magnetoelectric effect.
Publisher
Springer Science and Business Media LLC,Nature Publishing Group UK,Nature Publishing Group
Subject
