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Journal Article
Anomalous diffusion along metal/ceramic interfaces
2018
Overview
Interface diffusion along a metal/ceramic interface present in numerous energy and electronic devices can critically affect their performance and stability. Hole formation in a polycrystalline Ni film on an
α
-Al
2
O
3
substrate coupled with a continuum diffusion analysis demonstrates that Ni diffusion along the Ni/
α
-Al
2
O
3
interface is surprisingly fast. Ab initio calculations demonstrate that both Ni vacancy formation and migration energies at the coherent Ni/
α
-Al
2
O
3
interface are much smaller than in bulk Ni, suggesting that the activation energy for diffusion along coherent Ni/
α
-Al
2
O
3
interfaces is comparable to that along (incoherent/high angle) grain boundaries. Based on these results, we develop a simple model for diffusion along metal/ceramic interfaces, apply it to a wide range of metal/ceramic systems and validate it with several ab initio calculations. These results suggest that fast metal diffusion along metal/ceramic interfaces should be common, but is not universal.
Little is known about diffusion along metal/ceramic interfaces even though it controls the physical behavior and lifetimes of many devices (including batteries, microelectronics, and jet engines). Here, the authors show that diffusion along a nickel/sapphire interface is abnormally fast due to nickel vacancies and generalise their findings to a wide-range of metal/ceramic systems.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
