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Purely electronic insulator-metal transition in rutile VO2
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Purely electronic insulator-metal transition in rutile VO2
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Purely electronic insulator-metal transition in rutile VO2
Purely electronic insulator-metal transition in rutile VO2
Journal Article

Purely electronic insulator-metal transition in rutile VO2

2025
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Overview
Volatile resistive switching in neuromorphic computing can be tuned by external stimuli such as temperature or electric-field. However, this type of switching is generally coupled to structural changes, resulting in slower reaction speed and higher energy consumption when incorporated into an electronic device. The vanadium dioxide (VO 2 ), which has near room temperature metal-insulator transition (MIT), is an archetypical volatile resistive switching system. Here, we demonstrate an isostructural MIT in an ultrathin VO 2 film capped with a photoconductive cadmium sulfide (CdS) layer. Transmission electron microscopy, resistivity experiments, and first-principles calculations show that the hole carriers induced by CdS photovoltaic effect are driving the MIT in rutile VO 2 . The insulating-rutile VO 2 phase has been proved and can remain stable for hours. Our finding provides a new approach to produce purely electronically driven MIT in VO 2 , and widens its applications in fast-response, low-energy neuromorphic devices. Previous work has shown that electronic and structural transitions in VO 2 can be decoupled by realizing an electronic transition within a monoclinic phase. Here, the authors extend this to the rutile phase by demonstrating a photodoping-driven transition from an insulating to a metallic rutile phase.