Journal Article

A two-dimensional Fe-doped SnS2 magnetic semiconductor

Huang, Le, Li, Bo, Zhong, Mianzeng, Lei, Na, Xing, Tao, Li, Jingbo, Wei, Zhongming, Zhang, Jun

2017

Overview

Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS 2 monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and the Fe contents are ∼2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe 0.021 Sn 0.979 S 2 monolayer show n-type behavior and exhibit high optoelectronic performance. Magnetic measurements show that pure SnS 2 is diamagnetic, whereas Fe 0.021 Sn 0.979 S 2 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ~31 K. Density functional theory calculations show that long-range ferromagnetic ordering in the Fe-doped SnS 2 monolayer is energetically stable, and the estimated Curie temperature agrees well with the results of our experiment. The results suggest that Fe-doped SnS 2 has significant potential in future nanoelectronic, magnetic, and optoelectronic applications. 2D materials can be doped with magnetic atoms in order to boost their potential applications in spintronics. Here, the authors fabricate Fe-doped SnS 2 monolayers and show that Fe 0.021 Sn 0.979 S 2 exhibits ferromagnetic behaviour with perpendicular anisotropy at 2 K, and a Curie temperature of 31 K.

• Publisher: Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
• Subject: 639/301/1005/1007 / 639/766/1130/2798 / 639/925/357/1018 / Anisotropy / Curie temperature / Density functional theory / Diamagnetism / Ferromagnetism / Field effect transistors / Humanities and Social Sciences / Iron / Magnetic measurement / Magnetism / Monolayers / multidisciplinary / Optoelectronics / Science / Science (multidisciplinary) / Semiconductor devices / Spintronics / Tin disulfide