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Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy
by
Rotenberg, Eli
, Koch, Roland J.
, Robinson, Joshua A.
, Shallenberger, Jeffrey
, Zou, Qiang
, Li, An-Ping
, De La Fuente Duran, Ana
, Bostwick, Aaron
, Chang, Cui-Zu
, Bersch, Brian
, Jiang, Jue
, van Duin, Adri C. T.
, Chuang, Ya-Wen
, Wang, Yuanxi
, Nayir, Nadire
, Wang, Ke
, Dong, Chengye
, Briggs, Natalie
, Subramanian, Shruti
, Fu, Mingming
, Jozwiak, Chris
, Kolmer, Marek
, Gai, Zheng
, Ko, Wonhee
, Zhu, Jun
, Crespi, Vincent
in
140/133
/ 140/146
/ 639/301/119/1003
/ 639/301/357/1018
/ Biomaterials
/ Bonding strength
/ Chemistry and Materials Science
/ Condensed Matter Physics
/ Environmental degradation
/ Epitaxy
/ Fermi surfaces
/ Free electrons
/ Gallium
/ Graphene
/ Heterostructures
/ MATERIALS SCIENCE
/ Metals
/ Nanotechnology
/ Optical and Electronic Materials
/ Optoelectronic devices
/ Silicon
/ Silicon carbide
/ Single crystals
/ Superconducting devices
/ Superconducting properties and materials
/ Superconductivity
/ Two-dimensional materials
2020
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Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy
by
Rotenberg, Eli
, Koch, Roland J.
, Robinson, Joshua A.
, Shallenberger, Jeffrey
, Zou, Qiang
, Li, An-Ping
, De La Fuente Duran, Ana
, Bostwick, Aaron
, Chang, Cui-Zu
, Bersch, Brian
, Jiang, Jue
, van Duin, Adri C. T.
, Chuang, Ya-Wen
, Wang, Yuanxi
, Nayir, Nadire
, Wang, Ke
, Dong, Chengye
, Briggs, Natalie
, Subramanian, Shruti
, Fu, Mingming
, Jozwiak, Chris
, Kolmer, Marek
, Gai, Zheng
, Ko, Wonhee
, Zhu, Jun
, Crespi, Vincent
in
140/133
/ 140/146
/ 639/301/119/1003
/ 639/301/357/1018
/ Biomaterials
/ Bonding strength
/ Chemistry and Materials Science
/ Condensed Matter Physics
/ Environmental degradation
/ Epitaxy
/ Fermi surfaces
/ Free electrons
/ Gallium
/ Graphene
/ Heterostructures
/ MATERIALS SCIENCE
/ Metals
/ Nanotechnology
/ Optical and Electronic Materials
/ Optoelectronic devices
/ Silicon
/ Silicon carbide
/ Single crystals
/ Superconducting devices
/ Superconducting properties and materials
/ Superconductivity
/ Two-dimensional materials
2020
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Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy
by
Rotenberg, Eli
, Koch, Roland J.
, Robinson, Joshua A.
, Shallenberger, Jeffrey
, Zou, Qiang
, Li, An-Ping
, De La Fuente Duran, Ana
, Bostwick, Aaron
, Chang, Cui-Zu
, Bersch, Brian
, Jiang, Jue
, van Duin, Adri C. T.
, Chuang, Ya-Wen
, Wang, Yuanxi
, Nayir, Nadire
, Wang, Ke
, Dong, Chengye
, Briggs, Natalie
, Subramanian, Shruti
, Fu, Mingming
, Jozwiak, Chris
, Kolmer, Marek
, Gai, Zheng
, Ko, Wonhee
, Zhu, Jun
, Crespi, Vincent
in
140/133
/ 140/146
/ 639/301/119/1003
/ 639/301/357/1018
/ Biomaterials
/ Bonding strength
/ Chemistry and Materials Science
/ Condensed Matter Physics
/ Environmental degradation
/ Epitaxy
/ Fermi surfaces
/ Free electrons
/ Gallium
/ Graphene
/ Heterostructures
/ MATERIALS SCIENCE
/ Metals
/ Nanotechnology
/ Optical and Electronic Materials
/ Optoelectronic devices
/ Silicon
/ Silicon carbide
/ Single crystals
/ Superconducting devices
/ Superconducting properties and materials
/ Superconductivity
/ Two-dimensional materials
2020
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Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy
Journal Article
Atomically thin half-van der Waals metals enabled by confinement heteroepitaxy
2020
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Overview
Atomically thin two-dimensional (2D) metals may be key ingredients in next-generation quantum and optoelectronic devices. However, 2D metals must be stabilized against environmental degradation and integrated into heterostructure devices at the wafer scale. The high-energy interface between silicon carbide and epitaxial graphene provides an intriguing framework for stabilizing a diverse range of 2D metals. Here we demonstrate large-area, environmentally stable, single-crystal 2D gallium, indium and tin that are stabilized at the interface of epitaxial graphene and silicon carbide. The 2D metals are covalently bonded to SiC below but present a non-bonded interface to the graphene overlayer; that is, they are ‘half van der Waals’ metals with strong internal gradients in bonding character. These non-centrosymmetric 2D metals offer compelling opportunities for superconducting devices, topological phenomena and advanced optoelectronic properties. For example, the reported 2D Ga is a superconductor that combines six strongly coupled Ga-derived electron pockets with a large nearly free-electron Fermi surface that closely approaches the Dirac points of the graphene overlayer.
Single-crystal 2D metals are stabilized at the interface between epitaxial graphene and silicon carbide, with strong internal gradients in bonding character. The confined 2D metals demonstrate compelling superconducting properties.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Springer Nature - Nature Publishing Group
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