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A Plasmonic Optoelectronic Resistive Random‐Access Memory for In‐Sensor Color Image Cryptography
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A Plasmonic Optoelectronic Resistive Random‐Access Memory for In‐Sensor Color Image Cryptography
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Journal Article
A Plasmonic Optoelectronic Resistive Random‐Access Memory for In‐Sensor Color Image Cryptography
2024
Overview
The optoelectronic resistive random‐access memory (RRAM) with the integrated function of perception, storage and intrinsic randomness displays promising applications in the hardware level in‐sensor image cryptography. In this work, 2D hexagonal boron nitride based optoelectronic RRAM is fabricated with semitransparent noble metal (Ag or Au) as top electrodes, which can simultaneous capture color image and generate physically unclonable function (PUF) key for in‐sensor color image cryptography. Surface plasmons of noble metals enable the strong light absorption to realize an efficient modulation of filament growth at nanoscale. Resistive switching curves show that the optical stimuli can impede the filament aggregation and promote the filament annihilation, which originates from photothermal effects and photogenerated hot electrons in localized surface plasmon resonance of noble metals. By selecting noble metals, the optoelectronic RRAM array can respond to distinct wavelengths and mimic the biological dichromatic cone cells to perform the color perception. Due to the intrinsic and high‐quality randomness, the optoelectronic RRAM can produce a PUF key in every exposure cycle, which can be applied in the reconfigurable cryptography. The findings demonstrate an effective strategy to build optoelectronic RRAM for in‐sensor color image cryptography applications. The optoelectronic Au/h‐BN/Au and Ag/h‐BN/Au resistive random‐access memory (RRAM) array is developed to achieve high‐quality in‐sensor color image cryptography. Resistance switching characteristics of RRAM devices can be modulated by optical stimuli due to plasmonic effects of noble metals. The double‐binary physically unclonalbe function keys can be simultaneously generated in the optoelectronic RRAM array via reading the high resistance state.
Publisher
John Wiley & Sons, Inc,John Wiley and Sons Inc,Wiley
Subject
