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A silicon metal-oxide-semiconductor electron spin-orbit qubit
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A silicon metal-oxide-semiconductor electron spin-orbit qubit
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Journal Article
A silicon metal-oxide-semiconductor electron spin-orbit qubit
2018
Overview
The silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/
f
trap noise and variability in the electron
g
-factor due to spin–orbit (SO) effects. Here we advantageously use interface–SO coupling for a critical control axis in a double-quantum-dot singlet–triplet qubit. The magnetic field-orientation dependence of the
g
-factors is consistent with Rashba and Dresselhaus interface–SO contributions. The resulting all-electrical, two-axis control is also used to probe the MOS interface noise. The measured inhomogeneous dephasing time,
T
2m
⋆
, of 1.6 μs is consistent with 99.95%
28
Si enrichment. Furthermore, when tuned to be sensitive to exchange fluctuations, a quasi-static charge noise detuning variance of 2 μeV is observed, competitive with low-noise reports in other semiconductor qubits. This work, therefore, demonstrates that the MOS interface inherently provides properties for two-axis qubit control, while not increasing noise relative to other material choices.
As the performance of silicon-based qubits has improved, there has been increasing focus on developing designs that are compatible with industrial processes. Here, Jock et al. exploit spin-orbit coupling to demonstrate full, all-electrical control of a metal-oxide-semiconductor electron spin qubit.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
