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The role of lattice dynamics in ferroelectric switching

by Zhang, Hongrui , Young, Ian , Parsonnet, Eric , Peng, Ren-Ci , Das, Sujit , Ramesh, Ramamoorthy , Íñiguez, Jorge , Fernandez, Abel , Shi, Qiwu , Fedorova, Natalya , Chen, Long-Qing , Qualls, Alexander , Nikonov, Dmitri , Huang, Yen-Lin , Huang, Xiaoxi , Pesquera, David , Cheng, Xiaoxing , Chang, Xue , Martin, Lane W.

in 639/301/119/544 / 639/301/119/996 / Bismuth / Bismuth ferrite / Clamping / Dynamics / Energy / Engineering / Equilibrium / Ferroelectric domains / Ferroelectric materials / Ferroelectricity / Ferroelectrics / Humanities and Social Sciences / Laboratories / MATERIALS SCIENCE / Membranes / Memory devices / Micrometers / Microscopy / multidisciplinary / Order parameters / Physics / Science / Science (multidisciplinary) / Substrates / Switching / Thin films

2022

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2022

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2022

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Journal Article

The role of lattice dynamics in ferroelectric switching

Zhang, Hongrui,

Young, Ian,

Parsonnet, Eric,

Peng, Ren-Ci,

Das, Sujit,

Ramesh, Ramamoorthy,

Íñiguez, Jorge,

Fernandez, Abel,

Shi, Qiwu,

Fedorova, Natalya,

Chen, Long-Qing,

Qualls, Alexander,

Nikonov, Dmitri,

Huang, Yen-Lin,

Huang, Xiaoxi,

Pesquera, David,

Cheng, Xiaoxing,

Chang, Xue,

Martin, Lane W.

2022

Overview

Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO 3 ) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO 3 films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching. Reducing the switching energy of ferroelectric films remains an important goal. Here, the authors elucidate the fundamental role of lattice dynamics in ferroelectric switching on both freestanding BiFeO 3 membranes and films clamped to a substrate.

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Publisher

Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio

Subject

/ Bismuth

/ Energy