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Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators
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Journal Article
Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators
2020
Overview
Recent advances in nonlinear optics have revolutionized integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si
3
N
4
and SiO
2
. While semiconductor materials feature much higher nonlinear coefficients and convenience in active integration, they have suffered from high waveguide losses that prevent the realization of efficient nonlinear processes on-chip. Here, we challenge this status quo and demonstrate a low loss AlGaAs-on-insulator platform with anomalous dispersion and quality (
Q
) factors beyond 1.5 × 10
6
. Such a high quality factor, combined with high nonlinear coefficient and small mode volume, enabled us to demonstrate a Kerr frequency comb threshold of only ∼36 µW in a resonator with a 1 THz free spectral range, ∼100 times lower compared to that in previous semiconductor platforms. Moreover, combs with broad spans (>250 nm) have been generated with a pump power of ∼300 µW, which is lower than the threshold power of state-of the-art dielectric micro combs. A soliton-step transition has also been observed for the first time in an AlGaAs resonator.
Despite larger nonlinear coefficients, waveguide losses have prevented using semiconductors instead of dielectric materials for on-chip frequency-comb sources. By significantly reducing waveguide loss, ultra-low-threshold Kerr comb generation is demonstrated in a high-
Q
AlGaAs-on-insulator microresonator system.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
