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Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
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Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
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Journal Article
Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
2016
Overview
Atomically thin transition metal dichalcogenides are direct-gap semiconductors with strong light–matter and Coulomb interactions. The latter accounts for tightly bound excitons, which dominate their optical properties. Besides the optically accessible bright excitons, these systems exhibit a variety of dark excitonic states. They are not visible in the optical spectra, but can strongly influence the coherence lifetime and the linewidth of the emission from bright exciton states. Here, we investigate the microscopic origin of the excitonic coherence lifetime in two representative materials (WS
2
and MoSe
2
) through a study combining microscopic theory with spectroscopic measurements. We show that the excitonic coherence lifetime is determined by phonon-induced intravalley scattering and intervalley scattering into dark excitonic states. In particular, in WS
2
, we identify exciton relaxation processes involving phonon emission into lower-lying dark states that are operative at all temperatures.
The interplay between dark and bright excitons has a significant impact on the optical properties of semiconducting transition metal dichalcogenides. Here, the authors perform computational and experimental studies which unveil the microscopic origin of the excitonic coherence lifetime in WS
2
and MoSe
2
.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
