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Strain engineering and epitaxial stabilization of halide perovskites
by
Lo, Yu-Hwa
, Li, Lain-Jong
, Xu, Sheng
, Wang, Chunfeng
, Hu, Hongjie
, Wang, Chonghe
, Zhang, Zhuorui
, Li, Yuheng
, Qi, Baiyan
, Yang, Kesong
, Gu, Yue
, Choi, Woojin
, Lin, Muyang
, Chiu, Ming-Hui
, Cai, Jinze
, Rao, Rahul
, Dayeh, Shadi
, Zhang, Jingxin
, Maruyama, Benji
, Song, Jiawei
, Islam, Ahmad E.
, Yu, Yugang
, Chen, Yimu
, Li, Yang
, Lei, Yusheng
in
140/133
/ 140/146
/ 142/126
/ 639/301/299/946
/ 639/301/357/995
/ Compressive properties
/ Control
/ Crystal lattices
/ Crystal structure
/ Electric properties
/ Engineering
/ Epitaxial growth
/ Epitaxy
/ Halides
/ Hole mobility
/ Humanities and Social Sciences
/ Industrial engineering
/ Influence
/ Iodides
/ Iodine
/ Materials
/ Methods
/ multidisciplinary
/ Neutralization
/ Optical properties
/ Optoelectronic devices
/ Organic chemistry
/ Perovskite
/ Perovskites
/ Phase transitions
/ Science
/ Science (multidisciplinary)
/ Semiconductor films
/ Single crystals
/ Spectrum analysis
/ Stabilization
/ Strain analysis
/ Strains and stresses
/ Stress relaxation (Materials)
/ Stress relieving (Materials)
/ Substrates
/ Synergistic effect
/ Thermal expansion
/ Thin films
2020
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Strain engineering and epitaxial stabilization of halide perovskites
by
Lo, Yu-Hwa
, Li, Lain-Jong
, Xu, Sheng
, Wang, Chunfeng
, Hu, Hongjie
, Wang, Chonghe
, Zhang, Zhuorui
, Li, Yuheng
, Qi, Baiyan
, Yang, Kesong
, Gu, Yue
, Choi, Woojin
, Lin, Muyang
, Chiu, Ming-Hui
, Cai, Jinze
, Rao, Rahul
, Dayeh, Shadi
, Zhang, Jingxin
, Maruyama, Benji
, Song, Jiawei
, Islam, Ahmad E.
, Yu, Yugang
, Chen, Yimu
, Li, Yang
, Lei, Yusheng
in
140/133
/ 140/146
/ 142/126
/ 639/301/299/946
/ 639/301/357/995
/ Compressive properties
/ Control
/ Crystal lattices
/ Crystal structure
/ Electric properties
/ Engineering
/ Epitaxial growth
/ Epitaxy
/ Halides
/ Hole mobility
/ Humanities and Social Sciences
/ Industrial engineering
/ Influence
/ Iodides
/ Iodine
/ Materials
/ Methods
/ multidisciplinary
/ Neutralization
/ Optical properties
/ Optoelectronic devices
/ Organic chemistry
/ Perovskite
/ Perovskites
/ Phase transitions
/ Science
/ Science (multidisciplinary)
/ Semiconductor films
/ Single crystals
/ Spectrum analysis
/ Stabilization
/ Strain analysis
/ Strains and stresses
/ Stress relaxation (Materials)
/ Stress relieving (Materials)
/ Substrates
/ Synergistic effect
/ Thermal expansion
/ Thin films
2020
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Strain engineering and epitaxial stabilization of halide perovskites
by
Lo, Yu-Hwa
, Li, Lain-Jong
, Xu, Sheng
, Wang, Chunfeng
, Hu, Hongjie
, Wang, Chonghe
, Zhang, Zhuorui
, Li, Yuheng
, Qi, Baiyan
, Yang, Kesong
, Gu, Yue
, Choi, Woojin
, Lin, Muyang
, Chiu, Ming-Hui
, Cai, Jinze
, Rao, Rahul
, Dayeh, Shadi
, Zhang, Jingxin
, Maruyama, Benji
, Song, Jiawei
, Islam, Ahmad E.
, Yu, Yugang
, Chen, Yimu
, Li, Yang
, Lei, Yusheng
in
140/133
/ 140/146
/ 142/126
/ 639/301/299/946
/ 639/301/357/995
/ Compressive properties
/ Control
/ Crystal lattices
/ Crystal structure
/ Electric properties
/ Engineering
/ Epitaxial growth
/ Epitaxy
/ Halides
/ Hole mobility
/ Humanities and Social Sciences
/ Industrial engineering
/ Influence
/ Iodides
/ Iodine
/ Materials
/ Methods
/ multidisciplinary
/ Neutralization
/ Optical properties
/ Optoelectronic devices
/ Organic chemistry
/ Perovskite
/ Perovskites
/ Phase transitions
/ Science
/ Science (multidisciplinary)
/ Semiconductor films
/ Single crystals
/ Spectrum analysis
/ Stabilization
/ Strain analysis
/ Strains and stresses
/ Stress relaxation (Materials)
/ Stress relieving (Materials)
/ Substrates
/ Synergistic effect
/ Thermal expansion
/ Thin films
2020
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Strain engineering and epitaxial stabilization of halide perovskites
Journal Article
Strain engineering and epitaxial stabilization of halide perovskites
2020
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Overview
Strain engineering is a powerful tool with which to enhance semiconductor device performance
1
,
2
. Halide perovskites have shown great promise in device applications owing to their remarkable electronic and optoelectronic properties
3
–
5
. Although applying strain to halide perovskites has been frequently attempted, including using hydrostatic pressurization
6
–
8
, electrostriction
9
, annealing
10
–
12
, van der Waals force
13
, thermal expansion mismatch
14
, and heat-induced substrate phase transition
15
, the controllable and device-compatible strain engineering of halide perovskites by chemical epitaxy remains a challenge, owing to the absence of suitable lattice-mismatched epitaxial substrates. Here we report the strained epitaxial growth of halide perovskite single-crystal thin films on lattice-mismatched halide perovskite substrates. We investigated strain engineering of α-formamidinium lead iodide (α-FAPbI
3
) using both experimental techniques and theoretical calculations. By tailoring the substrate composition—and therefore its lattice parameter—a compressive strain as high as 2.4 per cent is applied to the epitaxial α-FAPbI
3
thin film. We demonstrate that this strain effectively changes the crystal structure, reduces the bandgap and increases the hole mobility of α-FAPbI
3
. Strained epitaxy is also shown to have a substantial stabilization effect on the α-FAPbI
3
phase owing to the synergistic effects of epitaxial stabilization and strain neutralization. As an example, strain engineering is applied to enhance the performance of an α-FAPbI
3
-based photodetector.
A method of deposition of mixed-cation hybrid perovskite films as lattice-mismatched substrates for an α-FAPbI
3
film is described, giving strains of up to 2.4 per cent while also stabilizing the metastable α-FAPbI
3
phase for several hundred days.
Publisher
Nature Publishing Group UK,Nature Publishing Group
Subject
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