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The challenges of sub-20nm shallow trench isolation etching
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Magazine Article
The challenges of sub-20nm shallow trench isolation etching
2013
Overview
Unlike neutral species, ions are less susceptible to shadowing effects due to their acceleration by the sheath electric field, which leads to more directionality. Consequently, intra-cell depth loading can be reduced if the silicon trench formation were dominated by ions (Cl+ or Br+) instead of radicals. Ion dependent etching can be realized by increasing ion energy or ion density. To increase ion energy, one can elevate the bias power or lower the bias frequency.
