Asset Details
Do you wish to reserve the book?
Negative bias temperature instability in strain-engineered p-MOSFETs: a simulation study
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Negative bias temperature instability in strain-engineered p-MOSFETs: a simulation study
Do you wish to request the book?
Negative bias temperature instability in strain-engineered p-MOSFETs: a simulation study
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Negative bias temperature instability in strain-engineered p-MOSFETs: a simulation study
2010
Overview
Negative Bias Temperature Instability (NBTI) in p-MOSFETs is a serious reliability concern for digital and analog CMOS circuit applications. Strain in the channel region affects negative bias temperature instabilities, low frequency noise, radiation hardness, gate oxide quality and hot carrier performance. The understanding of these phenomena in strain-engineered p-MOSFETs from fundamental physics is essential. In this paper, technology CAD (TCAD) has been used to study the effects of strain on the negative bias temperature instabilities in p-MOSFETs. A quasi two dimensional (quasi-2D) physics-based Coulomb scattering mobility model for strained-Si has been developed and implemented in Synopsys Sentaurus Device tool for device simulation to understand NBTI in strain-engineered p-MOSFETs.
Publisher
Springer US,Springer,Springer Nature B.V
Subject
/ Bias
/ Design. Technologies. Operation analysis. Testing
/ Devices
/ Electric, optical and optoelectronic circuits
/ Exact sciences and technology
/ LF noise
/ Mathematical and Computational Engineering
/ Mathematical and Computational Physics
/ MOSFETs
/ Optical and Electronic Materials
/ Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
/ Strain
