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How we made the IGZO transistor
by
Hosono, Hideo
in
639/166/987
/ 639/301/1005/1007
/ Amorphous silicon
/ Electrical Engineering
/ Engineering
/ Flat panel displays
/ Gallium
/ Glass substrates
/ Hypotheses
/ Indium
/ Indium gallium zinc oxide
/ LCDs
/ Liquid crystal displays
/ Organic light emitting diodes
/ Reverse Engineering
/ Semiconductor devices
/ Silicon
/ Silicon transistors
/ Television sets
/ Thin film transistors
/ Thin films
/ Transistors
/ Zinc oxides
2018
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How we made the IGZO transistor
by
Hosono, Hideo
in
639/166/987
/ 639/301/1005/1007
/ Amorphous silicon
/ Electrical Engineering
/ Engineering
/ Flat panel displays
/ Gallium
/ Glass substrates
/ Hypotheses
/ Indium
/ Indium gallium zinc oxide
/ LCDs
/ Liquid crystal displays
/ Organic light emitting diodes
/ Reverse Engineering
/ Semiconductor devices
/ Silicon
/ Silicon transistors
/ Television sets
/ Thin film transistors
/ Thin films
/ Transistors
/ Zinc oxides
2018
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Do you wish to request the book?
How we made the IGZO transistor
by
Hosono, Hideo
in
639/166/987
/ 639/301/1005/1007
/ Amorphous silicon
/ Electrical Engineering
/ Engineering
/ Flat panel displays
/ Gallium
/ Glass substrates
/ Hypotheses
/ Indium
/ Indium gallium zinc oxide
/ LCDs
/ Liquid crystal displays
/ Organic light emitting diodes
/ Reverse Engineering
/ Semiconductor devices
/ Silicon
/ Silicon transistors
/ Television sets
/ Thin film transistors
/ Thin films
/ Transistors
/ Zinc oxides
2018
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Journal Article
How we made the IGZO transistor
2018
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Overview
Thin-film transistors made from indium gallium zinc oxide (IGZO) are driving the next evolution in active-matrix flat panel displays. Hideo Hosono recounts how demand for a high-performance alternative to amorphous silicon transistors led to their development.
Publisher
Nature Publishing Group UK,Nature Publishing Group
Subject
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