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Strain Localization Modes within Single Crystals Using Finite Deformation Strain Gradient Crystal Plasticity
Strain Localization Modes within Single Crystals Using Finite Deformation Strain Gradient Crystal Plasticity
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Strain Localization Modes within Single Crystals Using Finite Deformation Strain Gradient Crystal Plasticity
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Strain Localization Modes within Single Crystals Using Finite Deformation Strain Gradient Crystal Plasticity
Strain Localization Modes within Single Crystals Using Finite Deformation Strain Gradient Crystal Plasticity

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Strain Localization Modes within Single Crystals Using Finite Deformation Strain Gradient Crystal Plasticity
Strain Localization Modes within Single Crystals Using Finite Deformation Strain Gradient Crystal Plasticity
Journal Article

Strain Localization Modes within Single Crystals Using Finite Deformation Strain Gradient Crystal Plasticity

2021
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Overview
The present paper aims at providing a comprehensive investigation of the abilities and limitations of strain gradient crystal plasticity (SGCP) theories in capturing different kinds of localization modes in single crystals. To this end, the small deformation Gurtin-type SGCP model recently proposed by the authors, based on non-quadratic defect energy and the uncoupled dissipation assumption, is extended to finite deformation. The extended model is then applied to simulate several single crystal localization problems with different slip system configurations. These configurations are chosen in such a way as to obtain idealized slip and kink bands as well as general localization bands, i.e., with no particular orientation with respect to the initial crystallographic directions. The obtained results show the good abilities of the applied model in regularizing various kinds of localization bands, except for idealized slip bands. Finally, the model is applied to reproduce the complex localization behavior of single crystals undergoing single slip, where competition between kink and slip bands can take place. Both higher-order energetic and dissipative effects are considered in this investigation. For both effects, mesh-independent results are obtained, proving the good capabilities of SGCP theories in regularizing complex localization behaviors. The results associated with higher-order energetic effects are in close agreement with those obtained using a micromorphic crystal plasticity approach. Higher-order dissipative effects led to different results with dominant slip banding.