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Identifying and Understanding the Positive Impact of Defects for Optoelectronic Devices
by
Deng, Yu‐Hao
in
Bandwidths
/ Carrier recombination
/ Charge transport
/ Conflicts of interest
/ Current carriers
/ defect
/ Defects
/ Devices
/ Ion migration
/ optoelectronic device
/ Optoelectronic devices
/ photodetection
/ Photometers
/ Photonics
/ positive impact
/ Semiconductors
2024
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Identifying and Understanding the Positive Impact of Defects for Optoelectronic Devices
by
Deng, Yu‐Hao
in
Bandwidths
/ Carrier recombination
/ Charge transport
/ Conflicts of interest
/ Current carriers
/ defect
/ Defects
/ Devices
/ Ion migration
/ optoelectronic device
/ Optoelectronic devices
/ photodetection
/ Photometers
/ Photonics
/ positive impact
/ Semiconductors
2024
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Do you wish to request the book?
Identifying and Understanding the Positive Impact of Defects for Optoelectronic Devices
by
Deng, Yu‐Hao
in
Bandwidths
/ Carrier recombination
/ Charge transport
/ Conflicts of interest
/ Current carriers
/ defect
/ Defects
/ Devices
/ Ion migration
/ optoelectronic device
/ Optoelectronic devices
/ photodetection
/ Photometers
/ Photonics
/ positive impact
/ Semiconductors
2024
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Identifying and Understanding the Positive Impact of Defects for Optoelectronic Devices
Journal Article
Identifying and Understanding the Positive Impact of Defects for Optoelectronic Devices
2024
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Overview
Defects are generally regarded to have negative impacts on carrier recombination, charge transport, and ion migration in materials, which thus lower the efficiency, speed, and stability of optoelectronic devices. Meanwhile, lots of efforts which focused on minimizing defects have greatly improved the performances of devices. Then, can defects be positive in optoelectronic devices? Herein, relying on in‐depth understanding of defect‐associated effects in semiconductors, trapping of photo‐generated carriers by defects is applied to enlarge photoconductive gain in photodetection. Therefore, the record photoconductive gain, gain‐bandwidth product, and detection limit are achieved in this photodetector. Exceeding the general concept that defects are harmful, a new view that the defects can be positive in photodetection is identified, which may guide to design high‐performance photodetectors. Relying on in‐depth understanding of defect‐associated effects in semiconductors, trapping of photo‐generated carriers by defects is applied to enlarge photoconductive and the record performances are achieved in this photodetector. Exceeding the general concept that defects are harmful, a new view that defects are positive in optoelectronics is identified, which will guide us to design high‐performance devices in the future.
Publisher
John Wiley & Sons, Inc,Wiley-VCH
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