Journal Article

Structural and Optical Characteristics of 4H-SiC UV Detectors Irradiated with Argon Ions

Nikitina, I. P., Kalinina, E. V., Kudoyarov, M. F., Zabrodskii, V. V., Ivanova, E. V.

2020

Overview

The results of a study into the effect of irradiation with heavy Ar ions on the structural and optical characteristics of 4 H -SiC are presented. It is shown that even upon single-time irradiation with 53-MeV Ar ions at a fluence of 1 × 10 10 cm –2 there are at least two powerful local regions with negative deformation dominant in the structure of silicon carbide. Also, a region with positive deformation is observed in the structure. The formation of localized clusters with negative and positive deformations along with the undisturbed matrix gives rise to linear-type defects that partially relieve stresses in the structure. It is assumed that, upon irradiation with Ar ions, the resulting complex defect structure provides the effect of point-defect gettering and leads to a quantum efficiency of 4 H -SiC UV photodetectors that is comparable with that of the initial samples.

• Publisher: Pleiades Publishing,Springer,Springer Nature B.V
• Subject: Argon / Argon ions / Chemical vapor deposition / Deformation / Detectors / Electrons / Fluence / Gettering / Irradiation / Magnetic Materials / Magnetism / Mathematical analysis / Matrix methods / Optical properties / Physics / Physics and Astronomy / Physics of Semiconductor Devices / Point defects / Quantum efficiency / Radiation / Semiconductors / Sensors / Silicon carbide / Tokamaks / Ultraviolet detectors / X-rays