Journal Article

Highly efficient spin transport in epitaxial graphene on SiC

Dlubak, Bruno, Mattana, Richard, De Heer, Walt A., Servet, Bernard, Martin, Marie-Blandine, Seneor, Pierre, Sprinkle, Mike, Petroff, Frédéric, Fert, Albert, Xavier, Stéphane, Anane, Abdelmadjid, Berger, Claire, Deranlot, Cyrile

2012

Overview

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen. A demonstration of the ability to transmit spin currents over distances of more than one hundred micrometres with an efficiency of up to 75% in graphene grown epitaxially on silicon carbide improves the prospects of graphene-based spintronic devices.

• Publisher: Nature Publishing Group UK,Nature Publishing Group,Nature Publishing Group [2005-....]
• Subject: 639/766/119/1001 / 639/925/357/918/1052 / Atomic / Classical and Continuum Physics / CMOS / Complex Systems / Condensed Matter / Condensed Matter Physics / Devices / Electronics / Graphene / Impedance / Materials Science / Mathematical and Computational Physics / Metal oxide semiconductors / Molecular / Nanotechnology / Optical and Plasma Physics / Physics / Physics and Astronomy / Semiconductors / Silicon / Silicon carbide / Spintronics / Theoretical / Transport