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Probing the Cr3+ luminescence sensitization in β-Ga2O3 with ion-beam-induced luminescence and thermoluminescence
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Probing the Cr3+ luminescence sensitization in β-Ga2O3 with ion-beam-induced luminescence and thermoluminescence
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Journal Article
Probing the Cr3+ luminescence sensitization in β-Ga2O3 with ion-beam-induced luminescence and thermoluminescence
2023
Overview
Ion-beam-induced luminescence (IBIL) measurements were performed in Cr-doped
β
-Ga
2
O
3
using both protons and helium ions, showing a strong enhancement of the Cr
3+
luminescence upon ion irradiation. Theoretical modelling of the IBIL intensity curves as a function of the fluence allowed estimating the effective cross-sections associated with the defect-induced IBIL enhancement and quenching processes. The results suggest that sensitizing the Cr
3+
luminescence is more efficient for H
+
than for He
+
irradiation. Thermoluminescence (TL) studies were performed in the pristine sample, with no TL signal being observed in the spectral region corresponding to the Cr
3+
emission. In agreement with the IBIL study, upon ion irradiation (with either protons or helium ions), this TL emission is activated. Moreover, it can be quenched by annealing at 923 K for 10 s, thus revealing the role played by the defects induced by the irradiation. These results show that the irradiation-induced defects play a major role in the activation of the Cr
3+
luminescence, a fact that can be exploited for radiation sensing and dosimetry.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
