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Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus
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Journal Article
Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus
2015
Overview
Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through
in situ
surface functionalization with caesium carbonate (Cs
2
CO
3
) and molybdenum trioxide (MoO
3
), respectively. Cs
2
CO
3
is found to strongly electron dope black phosphorus. The electron mobility of black phosphorus is significantly enhanced to ~27 cm
2
V
−1
s
−1
after 10 nm Cs
2
CO
3
modification, indicating a greatly improved electron-transport behaviour. In contrast, MoO
3
decoration demonstrates a giant hole-doping effect.
In situ
photoelectron spectroscopy characterization reveals significant surface charge transfer occurring at the dopants/black phosphorus interfaces. Moreover, the surface-doped black phosphorus devices exhibit a largely enhanced photodetection behaviour. Our findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics.
Black phosphorus is a graphene-like material that can be harnessed for two-dimensional electronic devices. Here, Xiang
et al
. demonstrate that adding caesium carbonate or molybdenum trioxide can significantly enhance the electron or hole conduction, respectively, of this promising material.
Publisher
Nature Publishing Group UK,Nature Publishing Group
Subject
