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A two-qubit logic gate in silicon
by
Huang, W.
, Hwang, J. C. C.
, Morello, A.
, Simmons, S.
, Veldhorst, M.
, Dehollain, J. P.
, Hudson, F. E.
, Muhonen, J. T.
, Laucht, A.
, Itoh, K. M.
, Dzurak, A. S.
, Yang, C. H.
in
142/126
/ 639/766/483/481
/ 639/925/357/1017
/ 639/925/927/481
/ Gates
/ Gates (Electronics)
/ Humanities and Social Sciences
/ Isotopic enrichment
/ letter
/ Magnetic fields
/ Materials
/ multidisciplinary
/ Quantum computing
/ Quantum dots
/ Quantum theory
/ Science
/ Science (multidisciplinary)
/ Semiconductors
/ Silicon
/ Transistors
2015
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A two-qubit logic gate in silicon
by
Huang, W.
, Hwang, J. C. C.
, Morello, A.
, Simmons, S.
, Veldhorst, M.
, Dehollain, J. P.
, Hudson, F. E.
, Muhonen, J. T.
, Laucht, A.
, Itoh, K. M.
, Dzurak, A. S.
, Yang, C. H.
in
142/126
/ 639/766/483/481
/ 639/925/357/1017
/ 639/925/927/481
/ Gates
/ Gates (Electronics)
/ Humanities and Social Sciences
/ Isotopic enrichment
/ letter
/ Magnetic fields
/ Materials
/ multidisciplinary
/ Quantum computing
/ Quantum dots
/ Quantum theory
/ Science
/ Science (multidisciplinary)
/ Semiconductors
/ Silicon
/ Transistors
2015
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A two-qubit logic gate in silicon
by
Huang, W.
, Hwang, J. C. C.
, Morello, A.
, Simmons, S.
, Veldhorst, M.
, Dehollain, J. P.
, Hudson, F. E.
, Muhonen, J. T.
, Laucht, A.
, Itoh, K. M.
, Dzurak, A. S.
, Yang, C. H.
in
142/126
/ 639/766/483/481
/ 639/925/357/1017
/ 639/925/927/481
/ Gates
/ Gates (Electronics)
/ Humanities and Social Sciences
/ Isotopic enrichment
/ letter
/ Magnetic fields
/ Materials
/ multidisciplinary
/ Quantum computing
/ Quantum dots
/ Quantum theory
/ Science
/ Science (multidisciplinary)
/ Semiconductors
/ Silicon
/ Transistors
2015
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Journal Article
A two-qubit logic gate in silicon
2015
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Overview
A high-fidelity two-qubit CNOT logic gate is presented, which is realized by combining single- and two-qubit operations with controlled phase operations in a quantum dot system using the exchange interaction.
A silicon CNOT logic gate
Whilst many different types of quantum bit or qubit have been realized, there are compelling reasons to focus on the development of silicon-based qubits that can be easily integrated with the CMOS (complementary metal-oxide-semiconductor) semiconductor technology used in today's transistors and microchips. High-fidelity silicon qubits have been demonstrated, but until now they have not performed quantum logic operations. Menno Veldhorst
et al
. report a high-fidelity two-qubit controlled NOT (or CNOT) logic gate using spins in enriched silicon. This device is a step towards a scalable, solid-state platform for quantum computation.
Quantum computation requires qubits that can be coupled in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates
1
,
2
. Many physical realizations of qubits exist, including single photons
3
, trapped ions
4
, superconducting circuits
5
, single defects or atoms in diamond
6
,
7
and silicon
8
, and semiconductor quantum dots
9
, with single-qubit fidelities that exceed the stringent thresholds required for fault-tolerant quantum computing
10
. Despite this, high-fidelity two-qubit gates in the solid state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits
5
, owing to the difficulties of coupling qubits and dephasing in semiconductor systems
11
,
12
,
13
. Here we present a two-qubit logic gate, which uses single spins in isotopically enriched silicon
14
and is realized by performing single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the Loss–DiVincenzo proposal
2
. We realize CNOT gates via controlled-phase operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is used in the two-qubit controlled-phase gate. By independently reading out both qubits, we measure clear anticorrelations in the two-spin probabilities of the CNOT gate.
Publisher
Nature Publishing Group UK,Nature Publishing Group
Subject
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