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Magnetic hard gap due to bound magnetic polarons in the localized regime
Magnetic hard gap due to bound magnetic polarons in the localized regime
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Magnetic hard gap due to bound magnetic polarons in the localized regime
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Magnetic hard gap due to bound magnetic polarons in the localized regime
Magnetic hard gap due to bound magnetic polarons in the localized regime
Journal Article

Magnetic hard gap due to bound magnetic polarons in the localized regime

2017
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Overview
We investigate the low temperature electron transport properties of manganese doped lead sulfide films. The system shows variable range hopping at low temperatures that crosses over into an activation regime at even lower temperatures. This crossover is destroyed by an applied magnetic field which suggests a magnetic origin of the hard gap, associated with bound magnetic polarons. Even though the gap forms around the superconducting transition temperature of lead, we do not find evidence of this being due to insulator-superconductor transition. Comparison with undoped PbS films, which do not show the activated transport behavior, suggests that bound magnetic polarons create the hard gap in the system that can be closed by magnetic fields.