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Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides
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Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides
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Journal Article
Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides
2020
Overview
Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS
2
nanoribbons on β-gallium (
iii
) oxide (β-Ga
2
O
3
) (100) substrates. LDE MoS
2
nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS
2
-nanoribbon-based field-effect transistors exhibit high on/off ratios of 10
8
and an averaged room temperature electron mobility of 65 cm
2
V
−1
s
−1
. The MoS
2
nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga
2
O
3
can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe
2
nanoribbons and lateral heterostructures made of p-WSe
2
and n-MoS
2
nanoribbons for futuristic electronics applications.
Aligned arrays of single-crystalline monolayer TMD nanoribbons with high aspect ratios, as well as their lateral heterostructures, are realized, with the growth directed by the ledges on the β-Ga
2
O
3
substrate. This approach provides an epitaxy platform for advanced electronics applications of TMD nanoribbons.
Publisher
Nature Publishing Group UK,Nature Publishing Group
