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Helical dislocation-driven plasticity and flexible high-performance thermoelectric generator in α-Mg3Bi2 single crystals
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Helical dislocation-driven plasticity and flexible high-performance thermoelectric generator in α-Mg3Bi2 single crystals
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Journal Article
Helical dislocation-driven plasticity and flexible high-performance thermoelectric generator in α-Mg3Bi2 single crystals
2025
Overview
Inorganic plastic semiconductors play a crucial role in the realm of flexible electronics. In this study, we present a cost-effective plastic thermoelectric semimetal magnesium bismuthide (
α
-Mg
3
Bi
2
), exhibiting remarkable thermoelectric performance. Bulk single-crystalline
α
-Mg
3
Bi
2
exhibits considerable plastic deformation at room temperature, allowing for the fabrication of intricate shapes such as the letters “SUSTECH” and a flexible chain. Transmission electron microscopy, time-of-flight neutron diffraction, and chemical bonding theoretic analyses elucidate that the plasticity of
α
-Mg
3
Bi
2
stems from the helical dislocation-driven interlayer slip, small-sized Mg atoms induced weak interlayer Mg-Bi bonds, and low modulus of intralayer Mg
2
Bi
2
2-
networks. Moreover, we achieve a power factor value of up to 26.2 µW cm
-1
K
-2
along the c-axis at room temperature in an n-type
α
-Mg
3
Bi
2
crystal. Our out-of-plane flexible thermoelectric generator exhibit a normalized power density of 8.1 μW cm
-2
K
-2
with a temperature difference of 7.3 K. This high-performance plastic thermoelectric semimetal promises to advance the field of flexible and deformable electronics.
The authors find that the plasticity of magnesium bismuthide (α-Mg
3
Bi
2
) arises from helical dislocation-driven interlayer slip, and the dispersion of lightweight Mg atoms also plays a pivotal role in facilitating strain redistribution during plastic deformation.
