Journal Article

Observation and coherent control of interface-induced electronic resonances in a field-effect transistor

Chin, A. W., Fleming, S., Oda, S., Milne, W. I., Tenorio-Pearl, J. O., Herbschleb, E. D., Creatore, C.

2017

Overview

The electrical control and readout of single two-level state defects in a defective oxide film grown directly on the channel of a thin-film FET allow for the extraction of individual long relaxation times. Electronic defect states at material interfaces provide highly deleterious sources of noise in solid-state nanostructures, and even a single trapped charge can qualitatively alter the properties of short one-dimensional nanowire field-effect transistors (FET) and quantum bit (qubit) devices 1 , 2 , 3 , 4 , 5 . Understanding the dynamics of trapped charge is thus essential for future nanotechnologies, but their direct detection and manipulation is rather challenging 2 , 4 , 5 . Here, a transistor-based set-up is used to create and probe individual electronic defect states that can be coherently driven with microwave (MW) pulses. Strikingly, we resolve a large number of very high quality ( Q ∼ 1 × 10 5 ) resonances in the transistor current as a function of MW frequency and demonstrate both long decoherence times (∼1 μs—40 μs) and coherent control of the defect-induced dynamics. Efficiently characterizing over 800 individually addressable resonances across two separate defect-hosting materials, we propose that their properties are consistent with weakly driven two-level systems.

• Publisher: Nature Publishing Group UK,Nature Publishing Group
• Subject: 639/766/119/544 / 639/766/119/995 / Biomaterials / Coherence / Condensed Matter Physics / Defects / Dynamics / Electronics / Field effect transistors / letter / Materials Science / Nanostructure / Nanostructured materials / Nanotechnology / Optical and Electronic Materials / Semiconductor devices / Transistors / Trapped charge