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Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material
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Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material
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Journal Article
Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material
2023
Overview
Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe
4
. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb
2
can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device’s functionality in wireless microwave detection and frequency doubling. These findings broaden the coupled spin and valley physics from 2D systems into a 3D system and lay a foundation for exploring bulk NLHE’s applications.
The nonlinear Hall effect (NLHE) results in a second-harmonic transverse voltage in response to alternating longitudinal current in zero magnetic field and has so far only been observed at low temperatures in bulk materials. Here, the authors observe bulk NLHE at room temperature in the Dirac material BaMnSb
2
, which will provide a large photocurrent for applications in THz detection.
