Asset Details
Do you wish to reserve the book?
Unprecedented enhancement of piezoelectricity of wurtzite nitride semiconductors via thermal annealing
Hey, we have placed the reservation for you!
By the way, why not check out events that you can attend while you pick your title.
Oops! Something went wrong.
Looks like we were not able to place the reservation. Kindly try again later.
Are you sure you want to remove the book from the shelf?
Unprecedented enhancement of piezoelectricity of wurtzite nitride semiconductors via thermal annealing
Do you wish to request the book?
Unprecedented enhancement of piezoelectricity of wurtzite nitride semiconductors via thermal annealing
Please be aware that the book you have requested cannot be checked out. If you would like to checkout this book, you can reserve another copy
We have requested the book for you!
Your request is successful and it will be processed during the Library working hours. Please check the status of your request in My Requests.
Oops! Something went wrong.
Looks like we were not able to place your request. Kindly try again later.
Journal Article
Unprecedented enhancement of piezoelectricity of wurtzite nitride semiconductors via thermal annealing
2025
Overview
Incorporating rare-earth elements into wurtzite nitride semiconductors, such as scandium-alloyed aluminum nitride (ScAlN), significantly enhances the piezoelectric response, which is vital for a broad range of acoustic, electronic, photonic, and quantum applications. To date, however, the measured piezoelectric response of nitride semiconductors is far below what theory has predicted. Herein, we demonstrate a simple, scalable, post-growth thermal annealing process that can dramatically boost the piezoelectric response of ScAlN. We achieve a 3.5-fold increase in the piezoelectric modulus, d
33
for ScAlN, from 12.3 pC/N in the as-grown state to 45.5 pC/N, which is eight times larger than that of AlN commercially used in 5 G cellphones. The observed enhancement is unambiguously confirmed by three separate measurement techniques. Detailed material characterization techniques reveal that optimized annealing conditions significantly improve the macroscopic structural quality, achieving a more homogeneous and ordered domain orientation, and reduces the lattice parameter ratio (c/a) in the wurtzite crystal structure. The dramatic enhancement of d
33
in ScAlN thin films promises extreme frequency scaling opportunities for bulk acoustic wave resonators for beyond-5 G applications.
The authors present a process that boosts the piezoelectric properties of ScAlN thin films by 3.5 times, enhancing their performance for use in acoustic devices. The technique is scalable, cost effective, and could enable advanced sensors, clocks, and communication technologies.
