Journal Article

Scaling growth rates for perovskite oxide virtual substrates on silicon

Pogrebnyakov, Alexej, Roth, Joseph, Brahlek, Matthew, Zhang, Lei, Engel-Herbert, Roman, Lapano, Jason

2019

Overview

The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO 3 exceeding 600 nm hr −1 . This tenfold increase in growth rate compared to SrTiO 3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware. A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO 3 layers on silicon at high growth rates by hybrid molecular beam epitaxy.

• Publisher: Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
• Subject: 132/122 / 147/137 / 639/301/1005 / 639/301/1005/1007 / 639/301/357/551 / 639/766/119/996 / Buffer layers / Electronic devices / Electronic equipment / Epitaxial growth / Growth rate / Humanities and Social Sciences / MATERIALS SCIENCE / Molecular beam epitaxy / multidisciplinary / Oxides / Perovskites / Scaling / Science / Science & Technology - Other Topics / Science (multidisciplinary) / Silicon / Silicon substrates / Strontium titanates / Substrates / Thin films