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Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules
Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules
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Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules
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Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules
Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules

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Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules
Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules
Journal Article

Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules

2023
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Overview
Stability and scalability are essential and urgent requirements for the commercialization of perovskite solar cells (PSCs), which are retarded by the non‐ideal interface leading to non‐radiative recombination and degradation. Extensive efforts are devoted to reducing the defects at the perovskite surface. However, the effects of the buried interface on the degradation and non‐radiative recombination need to be further investigated. Herein, an omnibearing strategy to modify buried and top surfaces of perovskite film to reduce interfacial defects, by incorporating aluminum oxide (Al2O3) as a dielectric layer and growth scaffolds (buried surface) and phenethylammonium bromide as a passivation layer (buried and top surfaces), is demonstrated. Consequently, the open‐circuit voltage is extensively boosted from 1.02 to 1.14 V with the incorporation of Al2O3 filling the voids between grains, resulting in dense morphology of buried interface and reduced recombination centers. Finally, the impressive efficiencies of 23.1% (0.1 cm2) and 22.4% (1 cm2) are achieved with superior stability, which remain 96% (0.1 cm2) and 89% (1 cm2) of its initial performance after 1200 (0.1 cm2) and 2500 h (1 cm2) illumination, respectively. The dual modification provides a universal method to reduce interfacial defects, revealing a promising prospect in developing high‐performance PSCs and modules. The aluminum oxide (Al2O3) nanoparticles are imbedded into the buried interface, which fills the voids and grain boundaries of perovskite, leading to compact morphology and reduced dangling bonds and defects. The suppressed trap‐assisted recombination, better energy alignment, and decreased J–V hysteresis in the modified device with Al2O3 nanoparticles and phenethylammonium bromide contribute to a significant increase in voltage and stability.