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Integrated optical probing scheme enabled by localized-interference metasurface for chip-scale atomic magnetometer
Integrated optical probing scheme enabled by localized-interference metasurface for chip-scale atomic magnetometer
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Integrated optical probing scheme enabled by localized-interference metasurface for chip-scale atomic magnetometer
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Integrated optical probing scheme enabled by localized-interference metasurface for chip-scale atomic magnetometer
Integrated optical probing scheme enabled by localized-interference metasurface for chip-scale atomic magnetometer

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Integrated optical probing scheme enabled by localized-interference metasurface for chip-scale atomic magnetometer
Integrated optical probing scheme enabled by localized-interference metasurface for chip-scale atomic magnetometer
Journal Article

Integrated optical probing scheme enabled by localized-interference metasurface for chip-scale atomic magnetometer

2024
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Overview
Emerging miniaturized atomic sensors such as optically pumped magnetometers (OPMs) have attracted widespread interest due to their application in high-spatial-resolution biomagnetism imaging. While optical probing systems in conventional OPMs require bulk optical devices including linear polarizers and lenses for polarization conversion and wavefront shaping, which are challenging for chip-scale integration. In this study, an integrated optical probing scheme based on localized-interference metasurface for chip-scale OPM is developed. Our monolithic metasurface allows tailorable linear polarization conversion and wavefront manipulation. Two silicon-based metasurfaces namely meta-polarizer and meta-polarizer-lens are fabricated and characterized, with maximum transmission efficiency and extinction ratio (ER) of 86.29 % and 14.2 dB for the meta-polarizer as well as focusing efficiency and ER of 72.79 % and 6.4 dB for the meta-polarizer-lens, respectively. A miniaturized vapor cell with 4 × 4 × 4 mm dimension containing Rb and N is combined with the meta-polarizer to construct a compact zero-field resonance OPM for proof of concept. The sensitivity of this sensor reaches approximately 9 fT/Hz with a dynamic range near zero magnetic field of about ±2.3 nT. This study provides a promising solution for chip-scale optical probing, which holds potential for the development of chip-integrated OPMs as well as other advanced atomic devices where the integration of optical probing system is expected.