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Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2
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Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2
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Journal Article
Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2
2018
Overview
Transition metal dichalcogenide materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1
T
′-WSe
2
. We observe edge states at the crystallographically aligned interface between a quantum spin Hall insulating domain of 1
T
′-WSe
2
and a semiconducting domain of 1
H
-WSe
2
in contiguous single layers. The QSHI nature of single-layer 1
T
′-WSe
2
is verified using angle-resolved photoemission spectroscopy to determine band inversion around a 120 meV energy gap, as well as scanning tunneling spectroscopy to directly image edge-state formation. Using this edge-state geometry we confirm the predicted penetration depth of one-dimensional interface states into the two-dimensional bulk of a QSHI for a well-specified crystallographic direction. These interfaces create opportunities for testing predictions of the microscopic behavior of topologically protected boundary states.
Transition metal dichalcogenides may host exotic topological phases in the two-dimensional limit, but detailed atomic properties have rarely been explored. Here, Ugeda et al. observe edge-states at the interface between a single layer quantum spin Hall insulator 1
T
′-WSe
2
and a semiconductor 1
H
-WSe
2
.
Publisher
Nature Publishing Group UK,Nature Publishing Group,Nature Portfolio
Subject
