Journal Article

Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays

Bauer, Siegfried, Sakurai, Takayasu, Zschieschang, Ute, Takeuchi, Ken, Yokota, Tomoyuki, Takamiya, Makoto, Sekitani, Tsuyoshi, Someya, Takao, Klauk, Hagen

2009

Overview

Using organic transistors with a floating gate embedded in hybrid dielectrics that comprise a 2-nanometer-thick molecular self-assembled monolayer and a 4-nanometer-thick plasma-grown metal oxide, we have realized nonvolatile memory arrays on flexible plastic substrates. The small thickness of the dielectrics allows very small program and erase voltages ([less-than or equal to]6 volts) to produce a large, nonvolatile, reversible threshold-voltage shift. The transistors endure more than 1000 program and erase cycles, which is within two orders of magnitude of silicon-based floating-gate transistors widely employed in flash memory. By integrating a flexible array of organic floating-gate transistors with a pressure-sensitive rubber sheet, we have realized a sensor matrix that detects the spatial distribution of applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.

• Publisher: American Association for the Advancement of Science,The American Association for the Advancement of Science
• Subject: Applied sciences / computer hardware / Copper / Dielectric materials / Dielectrics / digital images / Drains / Electric current / Electric potential / electric power / Electrodes / Electronics / Exact sciences and technology / Integrated circuits / Integrated circuits by function (including memories and processors) / Magnetic and optical mass memories / Rubber / Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / Sensors / Spatial distribution / Storage and reproduction of information / Threshold voltage / Transistors