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A single-atom electron spin qubit in silicon
by
Morton, John J. L.
, Dzurak, Andrew S.
, Tan, Kuan Y.
, Lim, Wee H.
, Jamieson, David N.
, Dehollain, Juan P.
, Morello, Andrea
, Pla, Jarryd J.
in
639/766/119/1001
/ 639/766/483/481
/ Atomic properties
/ Classical and quantum physics: mechanics and fields
/ Electron spin
/ Electrons
/ Exact sciences and technology
/ Experiments
/ Humanities and Social Sciences
/ Isotopic enrichment
/ letter
/ Magnetic fields
/ multidisciplinary
/ Observations
/ Phosphorus
/ Physics
/ Quantum chemistry
/ Quantum information
/ R&D
/ Research & development
/ Science
/ Science (multidisciplinary)
/ Semiconductors
/ Silicon
2012
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A single-atom electron spin qubit in silicon
by
Morton, John J. L.
, Dzurak, Andrew S.
, Tan, Kuan Y.
, Lim, Wee H.
, Jamieson, David N.
, Dehollain, Juan P.
, Morello, Andrea
, Pla, Jarryd J.
in
639/766/119/1001
/ 639/766/483/481
/ Atomic properties
/ Classical and quantum physics: mechanics and fields
/ Electron spin
/ Electrons
/ Exact sciences and technology
/ Experiments
/ Humanities and Social Sciences
/ Isotopic enrichment
/ letter
/ Magnetic fields
/ multidisciplinary
/ Observations
/ Phosphorus
/ Physics
/ Quantum chemistry
/ Quantum information
/ R&D
/ Research & development
/ Science
/ Science (multidisciplinary)
/ Semiconductors
/ Silicon
2012
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A single-atom electron spin qubit in silicon
by
Morton, John J. L.
, Dzurak, Andrew S.
, Tan, Kuan Y.
, Lim, Wee H.
, Jamieson, David N.
, Dehollain, Juan P.
, Morello, Andrea
, Pla, Jarryd J.
in
639/766/119/1001
/ 639/766/483/481
/ Atomic properties
/ Classical and quantum physics: mechanics and fields
/ Electron spin
/ Electrons
/ Exact sciences and technology
/ Experiments
/ Humanities and Social Sciences
/ Isotopic enrichment
/ letter
/ Magnetic fields
/ multidisciplinary
/ Observations
/ Phosphorus
/ Physics
/ Quantum chemistry
/ Quantum information
/ R&D
/ Research & development
/ Science
/ Science (multidisciplinary)
/ Semiconductors
/ Silicon
2012
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Journal Article
A single-atom electron spin qubit in silicon
2012
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Overview
The coherent manipulation of an individual electron spin qubit bound to a single phosphorus donor atom in natural silicon provides an excellent platform on which to build a scalable quantum computer.
Silicon-compatible spin qubits
Because silicon devices already form the basis for integrated electronic circuits, it would be ideal if future quantum-computing architectures could also be silicon-based, thus making use of the same well-developed fabrication technologies. A promising approach to constructing silicon qubits (quantum bits), first proposed more than a decade ago, is to make use of single dopant atoms in silicon. Jarryd Pla
et al
. have now made a nanoelectronic silicon device in which they can read out and control the electron spin of a single phosphorous donor atom, and demonstrate exceptionally long spin coherence times (of 200 microseconds). The combination of good qubit performance and practical fabrication approach opens the door to building scalable quantum-computing circuits.
A single atom is the prototypical quantum system, and a natural candidate for a quantum bit, or qubit—the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps
1
, as well as in diamond through the use of the nitrogen–vacancy-centre point defect
2
. Solid-state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger-scale quantum processors. Coherent control of spin qubits has been achieved in lithographically defined double quantum dots in both GaAs (refs
3–5
) and Si (ref.
6
). However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent in atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot read-out
7
,
8
,
9
. We use electron spin resonance to drive Rabi oscillations, and a Hahn echo pulse sequence reveals a spin coherence time exceeding 200 µs. This time should be even longer in isotopically enriched
28
Si samples
10
,
11
. Combined with a device architecture
12
that is compatible with modern integrated circuit technology, the electron spin of a single phosphorus atom in silicon should be an excellent platform on which to build a scalable quantum computer.
Publisher
Nature Publishing Group UK,Nature Publishing Group
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